发明名称 THERMAL TREATMENT APPARATUS, THERMAL TREATMENT METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To allow a thermal treatment providing correct optical reflectivity appropriately corresponding to a treatment object having various patterns formed on, for instance, a surface, and keeping the temperature of the treatment object as desired, based on the optical reflectivity. SOLUTION: In order to correctly obtain effective absorption rate on a surface of a semiconductor substrate, an angular distribution of irradiation light intensity (angular intensity distribution) by a first light source used for calculation of the effective absorption rate is adapted to an angular intensity distribution by a second light source used for an annealing process. By making such a first light source equivalent to the second light source, optical reflectivity on the surface of the semiconductor substrate depending on the light intensity distribution to the light irradiation angle of the irradiation light of the first light source, that is, effective reflectivity, is obtained. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009094301(A) 申请公布日期 2009.04.30
申请号 JP20070263720 申请日期 2007.10.09
申请人 FUJITSU MICROELECTRONICS LTD 发明人 KUBO TOMOHIRO
分类号 H01L21/26;H01L21/265;H01L21/8238;H01L27/092;H01L29/78 主分类号 H01L21/26
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