发明名称 Magnetoresistance effect element comprising a nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same
摘要 A magnetoresistance effect element is composed of a first ferromagnetic layer, a second ferromagnetic layer, and at least one nano-contact portion formed between the first and second ferromagnetic layers, which are formed on the same plane on a substrate. The nano-contact portion has a maximum dimension of not more than Fermi length of a material constituting the nano-contact portion. A permanent magnet layer or in-stack bias layer may be further formed on the first and/or second ferromagnetic layer.
申请公布号 US7522389(B2) 申请公布日期 2009.04.21
申请号 US20040882315 申请日期 2004.07.02
申请人 TDK CORPORATION 发明人 SBIAA RACHID;SATO ISAMU
分类号 G11B5/39;G11B5/127;G11B5/33;H01F10/32;H01F41/30;H01L43/08;H01L43/12 主分类号 G11B5/39
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