发明名称 |
METHODS OF LOW-K DIELECTRIC AND METAL PROCESS INTEGRATION |
摘要 |
An integrated process for forming metallization layers for electronic devices that use damascene structures that include low-k dielectric and metal. According to one embodiment of the present invention, the integrated process includes planarizing a gapfill metal in low-k dielectric structures, generating a protective layer on the low-k dielectric followed by cleaning the surface of the gapfill metal. Another embodiment of the present invention includes a method of protecting low-k dielectrics such as carbon doped silicon oxide.
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申请公布号 |
US2009087980(A1) |
申请公布日期 |
2009.04.02 |
申请号 |
US20080212611 |
申请日期 |
2008.09.17 |
申请人 |
DORDI YEZDI N;HOWALD ARTHUR M |
发明人 |
DORDI YEZDI N.;HOWALD ARTHUR M. |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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