| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can dispose a light-shielding layer and a back gate electrode in a lower layer of a field effect transistor, even if a pasted substrate is used, and to provide a method of manufacturing the semiconductor device and an electrooptical device that uses the semiconductor device. SOLUTION: In manufacturing a semiconductor device 10x to be used as an element substrate in a liquid-crystal apparatus, and the like, a pasting process wherein a support substrate 10d and a single-crystal semiconductor substrate 1 are pasted together via a silicon oxide film which will become a base insulation layer 15 and an oxygen-introducing process where oxygen is introduced into an intermediate position in the depth direction of the single-crystal semiconductor substrate 1 to form a first single-crystal semiconductor layer 11, a first gate insulating layer 13, and a second single crystal semiconductor layer 12 are conducted. Thereafter, impurities are partly introduced into the second single crystal semiconductor layer 12 to form the source region, the channel region 12g, and the drain region of a field effect transistor 10y, and at the same time, impurities are introduced into the first single-crystal semiconductor layer 11 to form a light-shielding back gate electrode 11x. COPYRIGHT: (C)2009,JPO&INPIT
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