发明名称 |
MOS transistor and CMOS transistor having strained channel epi layer and methods of fabricating the transistors |
摘要 |
Provided are a metal oxide semiconductor (MOS) transistor and a complementary MOS (CMOS) transistor each having a strained channel epi layer, and methods of fabricating the transistors. The MOS transistor may include at least one active region defined by an isolation structure formed in a substrate. At least one channel trench may be formed in a part of the at least one active region. At least one strained channel epi layer may be in the at least one channel trench. At least one gate electrode may be aligned on the at least one strained channel epi layer. Sources/drains may be arranged in the at least one active region along both sides of the at least one strained channel epi layer.
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申请公布号 |
US2009085125(A1) |
申请公布日期 |
2009.04.02 |
申请号 |
US20080285044 |
申请日期 |
2008.09.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KI-CHUL;SHIN HONG-JAE;PARK MOON-HAN;RHEE HWA-SUNG;LEE JUNG-DEOG |
分类号 |
H01L27/092;H01L29/94 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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