| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device such that its semiconductor substrate can be efficiently cooled. SOLUTION: The semiconductor device 10 has the semiconductor substrate 20 where a semiconductor switching device is formed, a surface electrode 30 provided on the semiconductor substrate 20, and a heat dissipation structure 50 provided on the surface electrode 30. The heat dissipation structure 50 is a complex having a carbon crystal region 52 and a metal region 54. For the carbon crystal region 52, carbon nanotubes, carbon nano-fullerene, diamond, or a combination thereof is used. The heat dissipation structure 50 dissipates heat of the semiconductor substrate 20 from the surface side thereof. COPYRIGHT: (C)2009,JPO&INPIT |
