发明名称 Method of fabricating a CIGS thin film
摘要 <p>Disclosed are an ink containing nanoparticles for formation of thin film of a solar cell and its preparation method, CIGS thin film solar cell having at least one light absorption layer formed by coating or printing the above ink containing nanoparticles on a rear electrode, and a process for manufacturing the same. More particularly, the above absorption layer comprises Cu, In, Ga and Se elements as constitutional ingredients thereof and such elements exist in the light absorption layer by coating or printing an ink that contains Cu 2 Se nanoparticles and (In,Ga) 2 Se 3 nanoparticles on the rear electrode, and heating the treated electrode with the ink. According to the present invention, since Cu(In,Ga)Se 2 , that is, CIGS, thin film is formed using the ink containing nanoparticles, a simple process is preferably used without requirement of vacuum processing or complex equipment and particle size of the thin film, Ga doping concentration, etc. can be easily regulated.</p>
申请公布号 EP2040305(A2) 申请公布日期 2009.03.25
申请号 EP20080102632 申请日期 2008.03.14
申请人 LG ELECTRONICS INC. 发明人 CHOE, YOUNG-HO;LEE, YOUNG-HEE;CHOI, YONG-WOO;KIM, HYUNG-SEOK;KIM, HO-GYOUNG
分类号 H01L21/368;C09D11/037;C09D11/52;H01L31/032 主分类号 H01L21/368
代理机构 代理人
主权项
地址