发明名称 Planar gated field emission devices
摘要 In a field emitter (100) including a substrate (110), the substrate (110) has a substantially non-conductive top substrate surface (112). A conductive cathode member (130) is disposed on the top substrate surface (112) and has a top cathode surface (132). A conductive gate member (120) is disposed on the top substrate surface (112) and is substantially coplanar with the cathode member (130). An emitter structure (140) extends away from the top cathode surface (132). The gate member (120) is spaced apart from the cathode member (130) at a distance so that when a predetermined potential is applied between the cathode member (130) and gate member (120), the emitter structure (140) will emit electrons.
申请公布号 US7508122(B2) 申请公布日期 2009.03.24
申请号 US20050029707 申请日期 2005.01.05
申请人 GENERAL ELECTRIC COMPANY 发明人 HUBER WILLIAM HULLINGER
分类号 H01J1/02;H01J1/62;H01J63/04 主分类号 H01J1/02
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