发明名称 Method and structure for hydrogenation of silicon substrates with shaped covers
摘要 Method and structure for hydrogenation of silicon substrates with shaped covers. According to an embodiment, the present invention provides a method for fabricating a photovoltaic material. The method includes providing a semiconductor substrate. The method also includes forming a crystalline material characterized by a plurality of worm hole structures therein overlying the semiconductor substrate. The worm hole structures are characterized by a density distribution from a surface region of the crystalline material to a defined depth within a z-direction of the surface region to form a thickness of material to be detached. The method further includes providing a glue layer overlying a surface region of the crystalline material. The method includes joining the surface region of the crystalline material via the glue layer to a support substrate.
申请公布号 US2009065051(A1) 申请公布日期 2009.03.12
申请号 US20080204730 申请日期 2008.09.04
申请人 SILICON CHINA (HK) LIMITED 发明人 CHAN YICK CHUEN;HO PUI YEE;CHEUNG NATHAN W.;CHAN CHUNG
分类号 H01L31/00 主分类号 H01L31/00
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