发明名称 |
Method and structure for hydrogenation of silicon substrates with shaped covers |
摘要 |
Method and structure for hydrogenation of silicon substrates with shaped covers. According to an embodiment, the present invention provides a method for fabricating a photovoltaic material. The method includes providing a semiconductor substrate. The method also includes forming a crystalline material characterized by a plurality of worm hole structures therein overlying the semiconductor substrate. The worm hole structures are characterized by a density distribution from a surface region of the crystalline material to a defined depth within a z-direction of the surface region to form a thickness of material to be detached. The method further includes providing a glue layer overlying a surface region of the crystalline material. The method includes joining the surface region of the crystalline material via the glue layer to a support substrate.
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申请公布号 |
US2009065051(A1) |
申请公布日期 |
2009.03.12 |
申请号 |
US20080204730 |
申请日期 |
2008.09.04 |
申请人 |
SILICON CHINA (HK) LIMITED |
发明人 |
CHAN YICK CHUEN;HO PUI YEE;CHEUNG NATHAN W.;CHAN CHUNG |
分类号 |
H01L31/00 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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