TRANSPARENT NANOCRYSTALLINE DIAMOND CONTACTS TO WIDE BANDGAP SEMICONDUCTOR DEVICES
摘要
A heterojunction between thin films of NCD and 4H-SiC was developed. Undoped and B-doped NCDs were deposited on both n- and p- SiC epilayers. I- V measurements on p+ NCD/n- SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30 °C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.
申请公布号
WO2009033076(A1)
申请公布日期
2009.03.12
申请号
WO2008US75469
申请日期
2008.09.05
申请人
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY