PLASMA PROCESSING APPARATUS AND PLASM PROCESSING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method capable of suppressing an increase in temperature when cutting a workpiece. SOLUTION: The plasma processing apparatus comprises: a first slice electrode 4 for cutting a silicon ingot 100 as a workpiece; a second slice electrode 6 that is arranged with an interval horizontally to the first slice electrode 4 and cuts the silicon ingot 100; and a voltage application section 8 for generating a prescribed potential difference between the first slice electrode 4 and the second slice electrode 6 so that plasma for cutting the silicon ingot 100 is generated when the first slice electrode 4 and the second slice electrode 6 are arranged so that they oppose the cutting direction of the silicon ingot 100 to the silicon ingot 100. COPYRIGHT: (C)2009,JPO&INPIT