| 摘要 |
In fabricating a memory device, a first electrode is provided. An alloy is formed thereon, and the alloy is oxidized to provide an oxide layer. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. Oxide is provided on the first electrode, and an implantation step in undertaken to implant material in the oxide to form a layer including oxide and implanted material having an oxygen deficiency and/or defects therein. A second electrode is then formed on the layer.
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