| 摘要 |
<p>A DMOS transistor and a manufacturing method thereof are provided to extend a distance of a drain in a gate to determine a breakdown voltage by a halo ion implantation region. A substrate(110) including a trench is formed. A gate(150) is formed in a lower part of a trench while interposing a gate insulating layer(140). A source(160) is formed in the lower part of the trench. A drain(170) is formed in the outside of the trench. A breakdown voltage adjusting ion implantation region(130) is formed in a lateral side of the trench contacting the gate. A drain extending region(180) electrically connects the gate and the drain and is formed in the lateral side of the trench. The drain is vertically extended.</p> |
