PIXEL STRUCTURE OF CHARGE-COUPLED DEVICE

摘要

A pixel structure of the solid imaging device is provided to improve the perpendicularity charge transfer efficiency by implanting the separate n-type in the transfer gate electrode. The light receiving portion(10) produces the electric charge from the incident light through the photoelectric conversion. The vertical charge transfer portion(20) perpendicularly transmits the electric charge. Two or three gate electrodes(31,33) are formed on the vertical charge transport portion. One gate electrode transfers the electric charge generated in the photo diode to the vertical charge transport portion and uses as the transfer gate electrode(31) transmitting the transferred electric charge in the vertical direction.