| 摘要 |
A first conductivity type cladding layer, an active layer, a second conductivity type first cladding layer, and a second conductivity type second cladding layer are laminated in this order on a semiconductor substrate by crystal growth. The second conductivity type second cladding layer is processed into a plurality of stripe-shaped ridge structure portions, and a laser bar is formed by cleavage in a direction orthogonal to a longitudinal direction of the ridge structure portions. A plurality of columns of the ridge structure portions that are aligned in the longitudinal direction of the ridge structure portions at predetermined intervals are arranged. The arrangement is such that each of the columns is displaced from the adjacent column in the longitudinal direction of the ridge structure portions so that an end portion of each of the ridge structure portions and an end portion of the adjacent ridge structure portion overlap each other in the longitudinal direction of the ridge structure portions. A region where the end portion of each of the ridge structure portions and the end portion of the adjacent ridge structure portion overlap each other is cleaved. According to this method, it is possible to provide a method for manufacturing a semiconductor laser device and a method for inspecting a semiconductor laser bar in the manufacturing process, capable of determining for each chip whether or not a deviation of the resonator length is within the tolerance in a simple manner.
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