发明名称 |
Reflection type photomask blank, manufacturing method thereof, reflection type photomask, and manufacturing method of semiconductor device |
摘要 |
A reflection type photomask blank includes: a substrate; a multilayer reflection film formed on the substrate for reflecting exposure light; a protection film formed on the multilayer reflection film for protecting the multilayer reflection film; an absorber layer for absorbing the exposure light on the protection film; and a shock absorbing film formed between the absorber layer and the protection film, with a resistance to etching which is performed when an exposure transfer pattern of the absorber layer is formed, in which the protection film is: a compound including Zr and Si; a compound including Zr, Si, and at least either one of O and N; or a single element or a compound including at least any one of Ru, C, and Y.
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申请公布号 |
US2009042110(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20080232757 |
申请日期 |
2008.09.23 |
申请人 |
TOPPAN PRINTING CO., LTD. |
发明人 |
MATSUO TADASHI;KANAYAMA KOICHIRO;TAMURA SHINPEI |
分类号 |
G03F1/22;G03F1/24;G03F7/20;H01L21/027 |
主分类号 |
G03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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