发明名称 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND IMAGE DISPLAY
摘要 <p>Disclosed is a semiconductor device wherein semiconductor elements are formed at a higher density. Also disclosed are a method for manufacturing such a semiconductor device and an image display using such a semiconductor device. Specifically disclosed is a semiconductor device characterized by comprising a resin film having a through hole penetrating the film from one side to the other side, an organic semiconductor arranged within the through hole, an insulating film covering one end of the organic semiconductor, a gate electrode covering the insulating film, a source electrode electrically connected with the other end of the organic semiconductor, and a drain electrode electrically connected with the other end of the organic semiconductor.</p>
申请公布号 WO2009019865(A1) 申请公布日期 2009.02.12
申请号 WO2008JP02124 申请日期 2008.08.06
申请人 PANASONIC CORPORATION;NAKATANI, SEIICHI;YAMASHITA, YOSHIHISA;KITAE, TAKASHI;SAWADA, SUSUMU 发明人 NAKATANI, SEIICHI;YAMASHITA, YOSHIHISA;KITAE, TAKASHI;SAWADA, SUSUMU
分类号 H01L21/336;H01L21/28;H01L29/786;H01L51/05;H01L51/30;H01L51/40;H01L51/50;H05B33/02;H05B33/10 主分类号 H01L21/336
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