Nonvolatile semiconductor memory device and method of testing thereof

摘要

A method of testing a nonvolatile semiconductor memory device is provided. The nonvolatile semiconductor memory device is provided with a memory cell of a field effect transistor type. The method includes: (A) performing erasing of the memory cell by using FN (Fowler-Nordheim) method; (B) performing programming back of the memory cell by using FN method, after the (A) step.