发明名称 |
METHOD OF DETACHING A THIN FILM BY MELTING PRECIPITATES |
摘要 |
A method of fabricating a thin film from a substrate comprises the following steps: (1) implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate; (2) optional intimate contacting of this face of the substrate with a stiffener; and (3) detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase.
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申请公布号 |
WO2007110515(A8) |
申请公布日期 |
2009.02.05 |
申请号 |
WO2007FR00534 |
申请日期 |
2007.03.28 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;TAUZIN, AURELIE;FAURE, BRUCE;GARNIER, ARNAUD |
发明人 |
TAUZIN, AURELIE;FAURE, BRUCE;GARNIER, ARNAUD |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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