发明名称 MEMORY ARRAY USING MECHANICAL SWITCH AND METHOD FOR OPERATING THEREOF
摘要 A method for controlling a memory array using a mechanical switch according to the present invention, in which the memory array comprises; a plurality of word lines; a plurality of bit lines intersecting each other with the plurality of word lines; a gate electrode connected to each of the word lines; a drain electrode spaced apart from the gate electrode and connected to a capacitor; and a source electrode comprises: an anchor part spaced apart from the gate electrode and connected to each of the bit lines; a mobile part where a dimple is formed, comprises the steps of: applying a first voltage V1 to the bit line selected from the plurality of bit lines; applying a second voltage V2 greater than a sum of the first voltage V1 and a pull-in voltage Vpi to the word lines selected from the plurality of word lines; and applying a voltage smaller than a sum of a erase voltage Verase and the pull-in voltage Vpi and a voltage greater than a difference between a write voltage Vwrite and the pull-in voltage Vpi to the word lines unselected from the plurality of word lines.
申请公布号 US2009021972(A1) 申请公布日期 2009.01.22
申请号 US20080122318 申请日期 2008.05.16
申请人 YOON JUN-BO;LEE JEONG-OEN;JANG WEON-WI 发明人 YOON JUN-BO;LEE JEONG-OEN;JANG WEON-WI
分类号 G11C5/00;G11C7/00;G11C11/24 主分类号 G11C5/00
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