发明名称 |
MEMORY ARRAY USING MECHANICAL SWITCH AND METHOD FOR OPERATING THEREOF |
摘要 |
A method for controlling a memory array using a mechanical switch according to the present invention, in which the memory array comprises; a plurality of word lines; a plurality of bit lines intersecting each other with the plurality of word lines; a gate electrode connected to each of the word lines; a drain electrode spaced apart from the gate electrode and connected to a capacitor; and a source electrode comprises: an anchor part spaced apart from the gate electrode and connected to each of the bit lines; a mobile part where a dimple is formed, comprises the steps of: applying a first voltage V1 to the bit line selected from the plurality of bit lines; applying a second voltage V2 greater than a sum of the first voltage V1 and a pull-in voltage Vpi to the word lines selected from the plurality of word lines; and applying a voltage smaller than a sum of a erase voltage Verase and the pull-in voltage Vpi and a voltage greater than a difference between a write voltage Vwrite and the pull-in voltage Vpi to the word lines unselected from the plurality of word lines.
|
申请公布号 |
US2009021972(A1) |
申请公布日期 |
2009.01.22 |
申请号 |
US20080122318 |
申请日期 |
2008.05.16 |
申请人 |
YOON JUN-BO;LEE JEONG-OEN;JANG WEON-WI |
发明人 |
YOON JUN-BO;LEE JEONG-OEN;JANG WEON-WI |
分类号 |
G11C5/00;G11C7/00;G11C11/24 |
主分类号 |
G11C5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|