发明名称 |
METHOD FOR SOURCE BIAS ALL BIT LINE SENSING IN NON-VOLATILE STORAGE |
摘要 |
Bit line-to-bit line noise is discharged in a NAND string prior to sensing a programming condition of a selected non-volatile storage element in the NAND string. A source voltage is applied which boosts the voltage in conductive NAND strings. The voltage boost results in capacitive coupling of noise to neighboring NAND strings. A current pull down device is used to discharge each NAND string prior to performing sensing. After each NAND string is coupled to a discharge path for a predetermined amount of time, bit lines of the NAND string are coupled to voltage sense components for sensing the programming condition of the selected non-volatile storage elements based on a potential of the bit lines. The selected non-volatile storage elements may have a negative threshold voltage. Further, a word line associated with the selected non-volatile storage elements may be set at ground.
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申请公布号 |
US2009003068(A1) |
申请公布日期 |
2009.01.01 |
申请号 |
US20070772002 |
申请日期 |
2007.06.29 |
申请人 |
LEE SEUNGPIL;NGUYEN HAO THAI;MUI MAN LUNG |
发明人 |
LEE SEUNGPIL;NGUYEN HAO THAI;MUI MAN LUNG |
分类号 |
G11C16/26 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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