发明名称 Method and structure for implanting bonded substrates for electrical conductivity
摘要 A partially completed multi-layered substrate, e.g., silicon on silicon. The substrate has a thickness of material from a first substrate. The thickness of material comprises a first face region. The substrate has a second substrate having a second face region. Preferably, the first face region of the thickness of material is joined to the second face region of the second substrate. The substrate has an interface region formed between the first face region of the thickness of material and the second face region of the second substrate. A plurality of particles are implanted within a portion of the thickness of the material and a portion of the interface region to electrically couple a portion of the thickness of material to a portion of the second substrate.
申请公布号 US2009001500(A1) 申请公布日期 2009.01.01
申请号 US20080157933 申请日期 2008.06.12
申请人 SILICON GENESIS CORPORATION 发明人 HENLEY FRANCOIS J.
分类号 H01L29/00 主分类号 H01L29/00
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