| 摘要 |
PROBLEM TO BE SOLVED: To provide an FET which suppresses current collapse, relaxes an electric field generated at a drain side edge of a gate, and is operable at a high voltage. SOLUTION: A GaN buffer layer 102 and an AlGaN layer 103 are formed on a substrate 101. A source electrode 104 and a drain electrode 105 are formed on a surface of the AlGaN layer 103. Space between the source electrode 104 and the drain electrode 105 is covered by an SiN film 106. An opening is formed in the SiN film 106, while a recess is done in the AlGaN layer 103, and a gate electrode 107 is formed burying the opening and the recess. A bottom face portion of the gate electrode 107 includes a bottom flat portion 201 parallel to an AlGaN layer/GaN layer interface, and an inclination changing portion 202 not parallel to the interface. In a curve of the inclination changing portion 202, a slope of a tangent line changes continuously, and forms a projected shape downward. COPYRIGHT: (C)2009,JPO&INPIT
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