| 摘要 |
<p>PURPOSE:To increase versatility by changing circuit constants or circuit constitution according to the stored data in a nonvolatile memory element. CONSTITUTION:A control signal SI is applied to gates of transistors (TR) 7, 8, and 9 and the response time of inverters INV1, INV2, and INV3 is determined by the voltage of the control signal SI. The control signal SI is generated by a voltage generation part controlled by the output of a writable memory consisting of four circuits of a fuse element and a TR. Then, data is written through a write control terminal according to whether the fuse element is burned out or not.</p> |
