| 摘要 |
PURPOSE:To improve the reliability of a semiconductor device by forming a passivation film before the step of forming aluminum electrodes or wirings or forming a silicon nitrided film on a field oxide, thereby preventing the aluminum electrode or wiring layer from corroding. CONSTITUTION:A base layer 2 and an emitter layer 3 are formed by a planar process on one surface of a silicon wafer 1. A field oxide 4 which mainly contains SiO2 on the surface of a transistor element contains phosphorus. Then, a silicon nitrided surface 5 is formed on the surface, but the thickness is preferably approx. 500-1,500Angstrom . A contacting hole 6 for forming an aluminum electrode is formed on the passivation film. After aluminum is deposited on the surface of a substrate, electrode or wiring layer is formed by photoetching. An SiO2 or silicon nitride film 9 is formed to cover an emitter electrode 7 and a base electrode 8. |
