发明名称 SEMICONDUCTOR LIGHT RECEIVING DEVICE
摘要 PURPOSE:To form a highly sensitive semiconductor light receiving device characterized by a low cost, high mounting density and simple manufacturing processes, by providing a means, which applies a reverse bias voltage to a photodiode in an operation amplifier, thereby omitting external adjustment by an offset adjusting resistor. CONSTITUTION:In a circuit diagram of an operation amplifier, the value of a current flowing an MOS type FET 1 is larger than the value of a current flowing an MOS type FET 2 owing to the insertion of a resistor element 11. Therefore, an input terminal voltage of the MOS type FET 1, which forms a differential input, is made lower than an input terminal voltage of the MOS type FET 2 so as to meet the unbalance in currents. A reverse bias voltage is applied to a photodiode 14, which is connected between said input terminals.
申请公布号 JPS61234576(A) 申请公布日期 1986.10.18
申请号 JP19850075272 申请日期 1985.04.11
申请人 CANON INC 发明人 MUTO KAZUHIKO
分类号 H01L31/10;H01L31/02;H03F3/08;H03F3/45 主分类号 H01L31/10
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