发明名称 DEVICE FOR CRYSTAL GROWTH BY MEANS OF GAS SOURCE MOLECULAR BEAM
摘要 PURPOSE:To shut off a material gas rapidly by providing an on-off valve at the front end of a inlet pipe for the material gas and operating said valve remotely to shut off the gas at the front end of the inlet pipe. CONSTITUTION:A gate valve 20 is arranged at the front end part T of an inlet pipe 5 which penetrating a container wall 7 of a processing container and an operating velocity of the gate valve 20 is 0.1sec. Accordingly, it is possible to shut off a material gas rapidly by actuating the gate valve 20 at high speed from the outside of a flange 8 of the processing container by a high- pressure gas inlet pipe 21. In such structure, the same effect can be obtained by using an electromagnetic on-off valve 20' instead of the gate valve 20 and introducing a conductive wiring 21' instead of the high-pressure gas inlet pipe 21 for the electromagnetic on-off operation.
申请公布号 JPS62211912(A) 申请公布日期 1987.09.17
申请号 JP19860055316 申请日期 1986.03.12
申请人 FUJITSU LTD 发明人 ISHIKAWA HIDEAKI;SASA MASAHIKO
分类号 H01L21/20;H01L21/203;H01L21/205;H01L21/26 主分类号 H01L21/20
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