发明名称 |
DEVICE FOR CRYSTAL GROWTH BY MEANS OF GAS SOURCE MOLECULAR BEAM |
摘要 |
PURPOSE:To shut off a material gas rapidly by providing an on-off valve at the front end of a inlet pipe for the material gas and operating said valve remotely to shut off the gas at the front end of the inlet pipe. CONSTITUTION:A gate valve 20 is arranged at the front end part T of an inlet pipe 5 which penetrating a container wall 7 of a processing container and an operating velocity of the gate valve 20 is 0.1sec. Accordingly, it is possible to shut off a material gas rapidly by actuating the gate valve 20 at high speed from the outside of a flange 8 of the processing container by a high- pressure gas inlet pipe 21. In such structure, the same effect can be obtained by using an electromagnetic on-off valve 20' instead of the gate valve 20 and introducing a conductive wiring 21' instead of the high-pressure gas inlet pipe 21 for the electromagnetic on-off operation.
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申请公布号 |
JPS62211912(A) |
申请公布日期 |
1987.09.17 |
申请号 |
JP19860055316 |
申请日期 |
1986.03.12 |
申请人 |
FUJITSU LTD |
发明人 |
ISHIKAWA HIDEAKI;SASA MASAHIKO |
分类号 |
H01L21/20;H01L21/203;H01L21/205;H01L21/26 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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