发明名称 HIGH DENSITY MOUNTING SUBSTRATE
摘要 <p>PURPOSE:To enable wiring between IC chips which are mounted on both surfaces of a metallic plate so as to realize high density mounting, by mounting the IC chips directly on both surfaces of a metallic plate which serves as a heat-radiating matter so as to obtain a large effect of heat radiation and enabling this substrate to correspond with highpower IC chips and besides providing wiring connection pins between the IC chips. CONSTITUTION:Through holes are formed in a metallic plate 10, and connection pins 20 formed by coating thin metallic lines with insulating films are inserted into the holes, and besides IC chips 30 are sticked on both surfaces of the metallic plate. In multilayer interconnection ceramic substrates 60 and 61 disposed on both the surfaces of the metallic plates 10, housing holes for the IC chips 30 and holes for the communication of connection pins 20 are bored. Conductor pads 40 which connect the IC chips 30 with the thin metallic lines for the connection pins 20 are formed on the substrates 60 and 61. Circuit wirings 70 are formed between the conductor pads 40. The IC chips 30 are connected with the conductor pads 40 via the fine metallic lines 50, and also the metallic lines existing in the center of the connection pins 20 are connected with the conductor pads 40 via the fine metallic lines 50.</p>
申请公布号 JPS63177545(A) 申请公布日期 1988.07.21
申请号 JP19870010283 申请日期 1987.01.19
申请人 NEC CORP 发明人 HAYASHIDA KIYOTOMI
分类号 H01L23/52;H01L23/12;H05K3/46 主分类号 H01L23/52
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