Method for activating zinc in semiconductor devices

摘要

A method for activating the zinc dopant in an active layer of a Group III/Group V semiconductor device comprises forming a layer of zinc doped Group III/Group IV material, and thereafter annealing the layer at a predetermined temperature and for a predetermined time sufficient to convert inactive zinc in the layer to acceptor zinc. In a preferred embodiment of the invention, a method for activating zinc dopant in the active layer of an InP-InGaAsP double heterostructure comprises annealing the active layer at a temperature of about 625 DEG C. for at least about 190 seconds which converts inactive zinc to acceptor zinc without substantially decreasing the total zinc in the active layer. In another preferred embodiment, a method for increasing the power output of InP-InGaAsP optoelectronic semiconductor device, such as a laser or an LED having a zinc doped active layer, comprises annealing the active layer of the semiconductor device at a temperature of about 625 DEG C. for at least about 190 seconds.