发明名称 PLASMA PROCESSOR
摘要 <P>PROBLEM TO BE SOLVED: To achieve a uniform plasma processing of a wafer edge portion that has not been carried out by a conventional plasma processor. <P>SOLUTION: This invention relates to a plasma processor wherein twelve sheet electrodes 1 are circularly displaced every 30 degree to be disposed at a position several millimeters away from the periphery of a ring board 2, and a symmetrical multiphase AC power supply 4 is connected to each electrode 1 through a power supply terminal 3 mounted on an end of the sheet electrode 1, so that a 12-phase AC voltage whose phase is staggered every 1/12 cycle is applied to each electrode. Each electrode 1 is insulated by a quartz glass 5. Further, twelve quartz pipes 6 as insulators are disposed along gaps of the sheet electrodes 1 adjacent to each other and in an outward direction of a ring board 2. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008258509(A) 申请公布日期 2008.10.23
申请号 JP20070101160 申请日期 2007.04.06
申请人 HITACHI KOKUSAI ELECTRIC INC;TOYAMA PREFECTURE 发明人 MATSUMOTO KAZUNORI;EBARA RYOICHI;YASHIMA SHINJI
分类号 H01L21/31;H05H1/24 主分类号 H01L21/31
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