| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition capable of satisfying both of high resolution and reduced roughness, and a resist pattern forming method. <P>SOLUTION: The positive resist composition comprises a base material component (A) of which the solubility in an alkali developer increases under the action of an acid, and an acid generator component (B) which generates an acid upon irradiation with radiation, wherein the base material component (A) comprises two or more compounds (A1) having a molecular weight of 700-2,500 obtained by substituting part or all of the hydrogen atoms of hydroxyl groups in phenol compounds (A1') for acid-dissociable dissolution inhibiting groups. The resist pattern forming method includes the steps of forming a resist film on a support using the positive resist composition; exposing the resist film; and developing the resist film to form a resist pattern. <P>COPYRIGHT: (C)2008,JPO&INPIT |
