| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxial structure having a plurality of uneven multiple quantum well structures, and a method of manufacturing the same. <P>SOLUTION: The epitaxial structure of a light emitting element includes a first semiconductor conductive layer formed on a substrate, an active layer formed on the first semiconductor conductive layer in the multiple quantum well(MQW), and a second semiconductor conductive layer formed on the active layer. A plurality of the uneven multiple quantum wells are formed by spraying a plurality of fine particles formed with at least a different type of material between the first semiconductor conductive layer and active layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
