Plasma etching of tapered structures,申请号US20060559684-传众专利搜索

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法人/股东/高管

发明名称	Plasma etching of tapered structures
摘要	The invention relates to a method of plasma etching substrates, in particular of etching tapered passages through substrates, using a process gas comprising at least one halogenide and oxygen.
申请公布号	US2007108160(A1)	申请公布日期	2007.05.17
申请号	US20060559684	申请日期	2006.11.14
申请人	SCHOTT AG	发明人	NGO HA-DUONG;SEIDEMANN VOLKER;STUDZINSKI DANIEL;LANGE MARTIN;HIESS ANDRE'
分类号	C23F1/00;G06F19/00	主分类号	C23F1/00
代理机构		代理人
主权项
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