| 摘要 |
In a method for producing bases with external contacts for surface mounting on circuit mounts, bases with external contacts are electrodeposited on semiconductor wafers or semiconductor chips. Subsequently, electrodeposited bases with external contacts are heat treated on the semiconductor wafers or the semiconductor chips at temperatures below the melting temperature of the deposited contact base material. Thereafter, a so-called RTP process is carried out in the form of a high-temperature interval in which the melting temperature is reached. Subsequently, the surfaces of the bases with external contacts are wet etched, the overall method being terminated by a cooling and drying operation. The bases with external contacts thus produced can be reliably surface mounted on circuit mounts.
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