发明名称 |
Field effect transistor and method of fabricating the same |
摘要 |
A field effect transistor according to the present invention has a semiconductor layer through which carriers injected from a source region travel toward a drain region, the semiconductor layer being formed from a composite material including an organic semiconductor material and nanotubes. The nanotubes may be nanotubes including plural ones joined with each other.
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申请公布号 |
US2007108480(A1) |
申请公布日期 |
2007.05.17 |
申请号 |
US20040564755 |
申请日期 |
2004.07.13 |
申请人 |
NANAI NORISHIGE;WAKITA NAOHIDE;TAKEUCHI TAKAYUKI |
发明人 |
NANAI NORISHIGE;WAKITA NAOHIDE;TAKEUCHI TAKAYUKI |
分类号 |
H01L29/76;H01L27/32;H01L51/00;H01L51/30 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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