| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of raising reliability. <P>SOLUTION: The semiconductor device comprises a semiconductor layer 10; a transistor 100 formed on the semiconductor layer; a first interlayer insulating layer 50 formed in the upper part of the semiconductor layer; first wiring layers 62 formed in the upper part of the first interlayer insulating layer; a second interlayer insulating layer 60 formed in the upper part of the first interlayer insulating layer and the first wiring layers; the second wiring layers 72 of the most upper layer and an electrode pad 73, which are formed in the upper part of the second interlayer insulating layer; a passivation layer 80 formed in the upper part of the second interlayer insulating layer, the second wiring layers, and the electrode pad; and an opening which is formed in the passivation layer so as to expose at least a part of the electrode pad. The shortest space S2 between the second wiring layers is larger than the shortest space S1 between the first wiring layers. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
