Thin-film structure making method for fabricating silicon on insulator device, involves inputting particles of chemical species into thin film on substrate, to compensate for flow of vacancies from surface of film

摘要

The method involves inputting particles of a chemical species into a thin film (1) on a substrate (2), to compensate for the flow of vacancies from a surface of the film. The thin film is doped by another chemical species different from the former species. The structure is destabilized. The substrate and the film are covered with respective masks during the input of the particles. An independent claim is also included for a thin film structure obtained by a thin film structure making method.