Method of making a semiconductor structure for high power semiconductor devices

摘要

A substrate arrangement for high power semiconductor devices includes a SiC wafer having a Si layer deposited on a surface of the SiC wafer. An SOI structure having a first layer of Si, an intermediate layer of SiO₂ and a third layer of Si, has its third layer of Si bonded to the Si deposited on the SiC wafer, forming a unitary structure. The first layer of Si and the intermediate layer of SiO₂ of the SOI are removed, leaving a pure third layer of Si on which various semiconductor devices may be fabricated. The third layer of Si and deposited Si layer may be removed over a portion of the substrate arrangement such that one or more semiconductor devices may be fabricated on the SiC wafer while other semiconductor devices may be accommodated on the pure third layer of Si.