NICKEL SALICIDE PROCESS AND THE METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method of forming a silicide layer includes forming a metal layer on a substrate having a silicon region, the metal layer including nickel, annealing the substrate and the metal layer to form the silicide layer on the silicon region, the silicide layer including nickel, and cooling the substrate and the silicide layer at a temperature of about 100° C. to about 300° C. for at least one minute, the cooling occurring after the annealing.