FERROELECTRIC MEMORY DEVICE, METHOD FOR MANUFACTURING SUCH FERROELECTRIC MEMORY DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A thin SiCH film having a thickness of 10nm or less is formed between a self-oriented film, which is formed under a lower electrode of a ferroelectric capacitor, and a conductive plug under the self-oriented film. Thus, influence of orientation of crystal grains in the conductive plug on the self-oriented film is blocked, and a problem of having a metal element in the self-oriented film not exhibiting the desired self orientation characteristics due to the influence of the metal crystal constituting the conductive plug is eliminated.