SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor memory device and a method for manufacturing the same are provided to prevent electrons from moving to an adjacent cell by etching a charge storing layer in an active direction during an isolation process. A tunnel dielectric(101) and a first charge storing layer(102) are sequentially formed on a semiconductor substrate(100). The first charge storing layer formed on an active region of the semiconductor substrate is etched to form an opening. A conductor layer is formed in the opening. A second charge storing layer(105) is formed on the first charge storing layer including the conductor layer. A blocking dielectric(108) and a gate electrode layer are sequentially formed on the second charge storing layer. The first and second charge storing layers are formed with an LP(Low Pressure)-nitride layer or a PE(Plasma Enhanced)-nitride layer. A thickness of the first charge storing layer is 10 to 300 Å. The opening is formed in the first charge storing layer so that the tunnel dielectric on a lower surface thereof is not exposed.