| 摘要 |
PROBLEM TO BE SOLVED: To reduce, in a semiconductor device including a ferrodielectric condenser, the film thickness of an inter-layer insulating film covering the ferrodielectric condenser, without reducing yield, and reduce infiltration of moisture into the ferrodielectric condenser. SOLUTION: A semiconductor device includes: a first inter-layer insulating film formed on a substrate; a ferrodielectric condenser formed on the first inter-layer insulating film; a second inter-layer insulating film formed on the first inter-layer insulating film, such as to cover the ferrodielectric condenser; and a hydrogen barrier film formed on the second inter-layer insulating film. The ferrodielectric condenser comprises a bottom electrode, a ferrodielectric film formed on the bottom electrode, a top electrode formed in contact with the ferrodielectric film, and an abrasion-proof film formed on the top electrode, and the second inter-layer insulating film covers the abrasion-proof film with a film thickness of 50 to 100 nm. COPYRIGHT: (C)2008,JPO&INPIT
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