发明名称 |
Method of Forming Vertical Contacts in Integrated Circuits |
摘要 |
A method of forming vertical contacts in an integrated circuit that couple one or more metal lines in a given metallization level to first and second features occupying different levels in the integrated circuit comprises various processing steps. A first etch stop layer is formed overlying at least of portion of the first feature while a second etch stop layer is formed overlying at least a portion of the second feature. An ILD layer is formed overlying the first and second etch stop layers. A photolithographic mask is formed overlying the ILD layer. The photolithographic mask defines a first opening over the first feature and a second opening over the second feature. A first etch process etches a first hole in the ILD layer through the first opening in the photolithographic mask that lands on the first etch stop layer and etches a second hole in the ILD layer through the second opening that lands on the second etch stop layer. Subsequently, a second etch process further etches the first hole so that it lands on the first feature.
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申请公布号 |
US2008164617(A1) |
申请公布日期 |
2008.07.10 |
申请号 |
US20070619623 |
申请日期 |
2007.01.04 |
申请人 |
ASSEFA SOLOMON;GAIDIS MICHAEL C;HUMMEL JOHN P;KANAKASABAPATHY SIVANANDA K |
发明人 |
ASSEFA SOLOMON;GAIDIS MICHAEL C.;HUMMEL JOHN P.;KANAKASABAPATHY SIVANANDA K. |
分类号 |
H01L23/52;H01L21/4763 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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