| 摘要 |
PROBLEM TO BE SOLVED: To prevent a variation of a crystal state due to a change of a collecting beam shape (width of minor axis) of radiating laser beam caused from a heat lens effect of an objective lens produced when forming a belt polycrystal, by scanning a continually oscillating laser beam onto a desired area of an amorphous or granular polycrystal silicon film formed on an insulating substrate. SOLUTION: The width of minor axis of a line-shape beam is calculated from the profile of the radiated laser beam when annealing, then, the radiated output (power) is adjusted so as to be proportional to the square root of variation of the calculated minor axis width, thereby, a risen temperature on the portion irradiated with laser is corrected to be constant. Whereby, even if the state of collecting light varies due to the heat lens effect of the objective lens, the laser beam radiation can be attained in a condition that a constant temperature rise is always obtained, and a belt polycrystal silicon film which is in a constant crystal state can be obtained. COPYRIGHT: (C)2008,JPO&INPIT |
