发明名称 APPARATUS AND METHOD OF TEMPERATURE CONTROL DURING CLEAVING PROCESS OF THICK FILM MATERIAL
摘要 PROBLEM TO BE SOLVED: To provide a method and an apparatus of temperature control during thick film material production. SOLUTION: The temperature control apparatus 100 includes a stage 120 comprising a planar surface 122 for supporting a bulk material 110 to be implanted and subsequently cleaved. The bulk material has a surface region 112, a side region 117, and a bottom region 118. The apparatus further includes a mechanical clamp device 130 constructed so that the bulk material is in physical contact with the planer surface for transferring thermal energy through an interface region between the bulk material and the stage while the surface region is substantially exposed, a sensor device 150 configured to measure a temperature value of the surface region and to generate an input data, an implant device configured to perform implantation of a plurality of particles through one or more portions of the surface region of the bulk material, and a controller 160 configured to receive and process the input data to increase and/or decrease the temperature value of the surface region through at least the interface region between the planer surface of the stage and the bottom region of the bulk material. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008285397(A) 申请公布日期 2008.11.27
申请号 JP20080014736 申请日期 2008.01.25
申请人 SILICON GENESIS CORP 发明人 HENLEY FRANCOIS J
分类号 C30B33/00;B28D5/00;C30B31/22;H01L21/02 主分类号 C30B33/00
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