| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method etching a laminated film containing a silicon oxide-film layer in at least one layer and a silicon nitride-film layer in at least one layer by a single treating gas. SOLUTION: In the etching method, a body to be treated with the laminated film containing the silicon oxide-film layer in at least one layer and the silicon nitride-film layer in at least one layer is fitted into a treating chamber, the treating gas is introduced and both the silicon oxide-layer film and the silicon nitride-film layer in the laminated film are etched. In the etching method, the treating gas contains C<SB>a</SB>H<SB>b</SB>F<SB>c</SB>(a=3 to 5, b=1 to 2 and c=3 to 10). COPYRIGHT: (C)2009,JPO&INPIT
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