| 发明名称 |
SCHOTTKY DIODE AND METHOD THEREFOR |
| 摘要 |
In one embodiment, a Schottky diode is formed on a semiconductor substrate with other semiconductor devices and is also formed with a high breakdown voltage and a low forward resistance.
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| 申请公布号 |
US2008299751(A1) |
申请公布日期 |
2008.12.04 |
| 申请号 |
US20070757222 |
申请日期 |
2007.06.01 |
| 申请人 |
QUDDUS MOHAMMED TANVIR;TU SHANGHUI L;ROZSYPAL ANTONIN |
发明人 |
QUDDUS MOHAMMED TANVIR;TU SHANGHUI L.;ROZSYPAL ANTONIN |
| 分类号 |
H01L29/872;H01L29/06 |
主分类号 |
H01L29/872 |
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