| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration of a ferroelectric film, with respect to a method for manufacturing a ferroelectric capacitor and the ferroelectric capacitor. SOLUTION: The method for manufacturing the ferroelectric capacitor has a step by which a charge accumulation section 5 composed of a bottom electrode 51, a ferroelectric film 52 and an upper electrode 53 is formed on a base insulating film 4; a step by which a stopper film 61 covering the charge accumulation section 5 is formed of an insulating material; a step by which a hydrogen barrier film 65 covering the stopper film 61 is formed; a step by which an interlayer insulating film 7 is formed on the base insulating film 4, including the hydrogen barrier film 65, a step by which the interlayer insulating film 7 is etched by using a resist pattern, the resist pattern is removed by a wet cleaning process and a second contact hole 72 exposing the upper electrode 53 is formed; and a step by which an adhesion layer 76 covering the top of the upper electrode 53 is formed of a conductive material of a hydrogen barrier type after that. The stopper film 61 is formed of a material which exhibits a lower etching rate of the wet cleaning process for removing the resist pattern than that of the hydrogen barrier film 65. COPYRIGHT: (C)2009,JPO&INPIT
|
