| 摘要 |
PROBLEM TO BE SOLVED: To provide an active matrix substrate with which fluctuation of capacitance value of the capacitor arranged on the substrate (for instance, a storage capacitor and a pixel electrode potential control capacitor or a capacitor serving as both capacitors) is reduced. SOLUTION: Each pixel region of the active matrix substrate is provided with a transistor, and a capacitor electrode connected to the transistor and functioning as one electrode of a capacitor. A gate insulating film is arranged on a lower layer of the capacitor electrode, with a conductor functioning as the other electrode of the capacitor, and the gate insulating film covers a gate electrode and the conductor of each transistor. The gate insulating film is provided with a thin film section having a reduced film thickness, in a region overlapping the conductor on the conductor, and at least a part of the thin film section overlaps the capacitor electrode. COPYRIGHT: (C)2009,JPO&INPIT |
