发明名称 Method for manufacturing light emitting diode devices
摘要 A method for manufacturing LED devices is disclosed to manufacture vertical LED devices without removing nonconductive substrates. A conductive substrate is formed on the LED epitaxial layer of the nonconductive substrate to form a LED wafer by bonding or electroplating, which is further cut into a plurality of LED sticks with each space layer bonded between every two LED sticks. Secondly, the plurality of LED sticks and space layers are fixed by a fixture while type I semiconductor layer and active layer of the LED epitaxial layer of each LED stick are covered by each space layer. A transparent conductive layer is further formed thereon whereby to electrically connect with the type II semiconductor layer contrary to type I and are further formed with a plurality of electrodes thereon. Finally the said LED sticks are cut to a plurality of LED devices.
申请公布号 US2008293172(A1) 申请公布日期 2008.11.27
申请号 US20080007051 申请日期 2008.01.04
申请人 LEE MING-SHUN;CHIU SHU-WEI 发明人 LEE MING-SHUN;CHIU SHU-WEI
分类号 H01L33/10;H01L33/32;H01L33/42;H01L33/44;H01L33/46 主分类号 H01L33/10
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